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US 7,411,249 B1Granted
Lateral high-voltage transistor with vertically-extended voltage-equalized drift region
OwnerRichard A. Blanchardinventor
Life of this patent
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Abstract
A lateral high-voltage device in which conductive trench plates are inserted across the voltage-withstand region, so that, in the on state, the current density vectors have less convergence. This can help reduce on-resistance.
Claims7
A lateral semiconductor device, comprising:
- a carrier-emission structure, which emits carriers when the device is in an ON state;
- and
- a voltage-withstand structure, through which carriers pass when the device is in the ON state, but which blocks voltage when the device is in the OFF state;
- wherein said voltage-withstand structure includes first and second conductive trench electrodes separated by a volume of semiconductor material , said trench electrodes each providing substantially equal potential across a respective face of said voltage-withstand structure;
- and wherein said carriers emitted by said carrier-emission structure pass through said first and second conductive trench electrodes.
2 more elements
A lateral semiconductor device, comprsing:
- a carrier-emission structure;
- and
- a voltage-withstand structure, though which carriers emitted by said carrier-emission structure can pass, said voltage-withstand structure includes first and second conductive trench electrodes separated by a volume of semiconductor material;
- and
- wherein said voltage-withstand structure extends along a lateral direction of predominant current vector, and said trench electrodes extend both in depth and also laterally normal to said current vector.
2 more elements
Dependencies are inferred from the claim text.