Nonvolatile semiconductor device and method of fabricating the same

A method of fabricating a nonvolatile semiconductor device comprising:

• forming a semiconductor body on a substrate, elongated in one direction and having a cross section perpendicular to a main surface of the substrate and to the elongated direction, the cross section having a predetermined curvature;
• forming a tunneling insulating layer on the semiconductor body;
• forming a floating gate, which is electrically insulated from the semiconductor body, on the tunneling insulating layer;
• forming an intergate insulating layer on the floating gate;
• forming a control gate, which is electrically insulated from the floating gate, on the intergate insulating layer;
• and
• forming source and drain regions, which are aligned with both sides of the control gate, within the semiconductor body.

A nonvolatile semiconductor device comprising:

• a semiconductor body elongated in one direction on a substrate, and having a cross section perpendicular to a main surface of the substrate and to the elongated direction, the cross section having a predetermined curvature;
• a channel region partially formed on the semiconductor body along the circumference of the semiconductor body;
• a tunneling insulation disposed on the channel region;
• a floating gate disposed on the tunneling insulating layer, and electrically insulated from the channel region;
• a high dielectric constant material layer disposed on the floating gate;
• a metallic control gate disposed on the material having the high dielectric constant and electrically insulated from the floating gate;
• and
• source and drain regions that are adjacent to sides of the control gate and formed on the semiconductor body.