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US 7,411,241 B2Granted
Vertical type nanotube semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-Nam Kim, Yun-Gi Kim
Life of this patent
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Abstract
A vertical type nanotube semiconductor device including a nanotube bit line, disposed on a substrate and in parallel with the substrate and composed of a nanotube with a conductive property, and a nanotube pole connected to the bit line vertically to the substrate and provides a channel through which carriers migrate. By manufacturing the semiconductor device using the bit line composed of the nanotube, cutoff of an electrical connection of the bit line is prevented and an integration density of the semiconductor device can be improved.
Claims18
An integrated circuit device, comprising:
- a substrate;
- an electrically conductive bit line on said substrate;
- and
- a field effect transistor having a first current carrying terminal electrically connected to said bit line, said field effect transistor comprising a nanotube channel region and a gate electrode surrounding the nanotube channel region.
1 more element
A memory cell, comprising:
- a substrate;
- an electrically conductive bit line on said substrate;
- an insulated-gate field effect transistor having a first source/drain region electrically connected to said bit line, said field effect transistor comprising a nanotube channel region and a gate electrode completely surrounding the nanotube channel region;
- and
- a capacitor comprising:
- a first nanotube electrode electrically connected to a second source/drain region of said insulated-gate field effect transistor;
- a capacitor dielectric layer on the first nanotube electrode;
- and
- a second electrode on the capacitor dielectric layer.
6 more elements
Dependencies are inferred from the claim text.