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US 7,411,239 B2Granted
Nand flash memory devices and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJi-Hwon Lee, Sung-Hoi Hur
Life of this patent
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Abstract
A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string, cross the plurality of active regions. Select transistors are disposed over the memory transistors, and lower plugs are disposed on each side of the cell string to electrically connect the plurality of active regions on both sides of the cell string and the select transistors.
Claims7
A NAND flash memory device comprising:
- active regions formed in a substrate;
- a cell string including memory transistors, the memory transistors including memory gate patterns formed above the active regions;
- select transistors arranged above the memory transistors;
- and
- lower plugs arranged on each side of the cell string to electrically connect the active regions disposed on each side of the cell string and the select transistors.
2 more elements
Dependencies are inferred from the claim text.