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US 7,411,237 B2Granted
Lanthanum hafnium oxide dielectrics
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
Claims35
An electronic device comprising:
- a substrate having an integrated circuit;
- and
- a dielectric layer disposed on the substrate as part of the integrated circuit, the dielectric layer containing a lanthanum hafnium oxide layer and a lanthanide other than lanthanum, the lanthanum hafnium oxide layer structured as one or more monolayers of lanthanum hafnium oxide.
A memory including:
- an array of memory cells on a substrate, a memory cell having a semiconductor device;
- and
- a dielectric layer disposed in the semiconductor device, the dielectric layer containing a lanthanum hafnium oxide layer and a lanthanide other than lanthanum, the lanthanum hafnium oxide layer structured as one or more monolayers of lanthanum hafnium oxide.
A system comprising:
- a controller;
- and
- an integrated circuit coupled to the controller, wherein at least one of the controller or integrated circuit includes a dielectric layer disposed on a substrate, the dielectric layer containing a lanthanum hafnium oxide layer and a lanthanide other than lanthanum, the lanthanum hafnium oxide layer structured as one or more monolayers of lanthanum hafnium oxide.
Dependencies are inferred from the claim text.