Light emitting device having protection element and method of manufacturing the light emitting device

A light emitting device, comprising:

• a lower semiconductor layer;
• an active layer formed above a first portion of a first surface of the lower semiconductor layer;
• an upper semiconductor layer formed above the active layer;
• a first electrode layer formed above the upper semiconductor layer and to be in electrical connection with the upper semiconductor layer;
• a second electrode layer formed above a second portion of the first surface of the lower semiconductor and in electrical connection with the lower semiconductor layer, wherein a space extending between the first and the second electrode layers;
• and
• a resistive protection layer formed to fill at least a part of the space between the first and second electrode layers to electrically connect the first and second electrodes,
• wherein a resistance Rf is an electrical resistance of the upper semiconductor layer, the active layer, and the lower semiconductor layer when a positive voltage is applied to the first electrode relative to the second electrode,
• wherein a resistance Rr is the electrical resistance of the upper semiconductor layer, the active layer, and the lower semiconductor layer when a negative voltage is applied to the first electrode relative to the second electrode, and
• wherein a resistance Rs of the resistive protection layer is greater than Rf and less than Rr.