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US 7,411,218 B2Granted
Method and device with durable contact on silicon carbide
AssigneeFairchild Semiconductor Corporation
InventorsWilliam F. Seng, Richard L. Woodin, Carl Anthony Witt
Life of this patent
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Abstract
A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.
Claims11
A silicon carbide Schottky diode comprising:
- a substrate of silicon carbide having two surfaces;
- a highly doped layer at one surface forming a cathode region;
- an ohmic contact on the highly doped layer to form one electrode contact for the diode;
- a lightly doped SIC drift layer at the other surface;
- a Schottky metal contact deposited on the other surface and forming a Schottky barrier junction on the lightly doped SiC surface;
- and
- a field termination region comprising a damaged crystal structure in the surface of the lightly doped drift region for reducing the electric field around the Schottky metal contact;
- wherein the damaged crystal structure comprises the entire surface of the lightly doped drift layer.
5 more elements
Dependencies are inferred from the claim text.