Semiconductor probe with resistive tip having metal shield thereon

A semiconductor probe comprising:

• a resistive tip doped with a first impurity, the resistive tip comprising:
• a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity;
• and
• first and second semiconductor electrode regions formed on sloped sides of the resistive tip and heavily doped with the second impurity:
• a cantilever having an end on which the resistive, tip is disposed;
• a dielectric layer disposed on the cantilever and substantially covering the first and second semiconductor electrode regions;
• and
• a metal shield disposed on the dielectric layer and having an opening at a position corresponding to the resistive region,
• wherein the dielectric layer comprises a material selected from the group consisting of SiO2, Si3N4, ONO, Al2O3, DLC, TiO2, HfO2, ZrO2, and NiO, and the metal shield is deposited to a thickness of 10 to 200 nm and comprises a material selected from the group consisting of Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IrO2, Ag, W, and WC.

A semiconductor probe comprising:

• a resistive tip doped with a first impurity, the resistive tip comprising:
• a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity;
• and
• first and second semiconductor electrode regions formed on sloped sides of the resistive tip and heavily doped with the second impurity;
• a canlilever having an end on which the resistive tip is disposed;
• and
• a dielectric layer and a metal shield sequentially stacked on the sloped sides of the resistive tip, substantially covering the first and second semiconductor electrode regions, and exposing the resistive tip.

A semiconductor probe comprising:

• a resistivc tip doped with a first impurity, the resistive tip comprising:
• a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity;
• and
• first and second semiconductor electrode regions formed on sloped sides of the resistive tip and heavily doped with the second impurity;
• a cantilever having an end on which the resistive tip is disposed;
• a dielectric layer and a metal shield sequentially stacked on the sloped sides of the resistive tip, stantially coyering the first and second semiconductor electrode regions, and exposing the resistive region,
• wherein the dielectric layer comprises a material selected from the group consisting of SiO2, Si3N4, ONO, Al2O3, DLC, TiO2, HfO2, ZrO2, and NiO, and the metal shield comprises a material selected from the group consisting of Al, Au, Ti, Cr, Pt, Cu, Ni, ITO, Ru, Ir, IrO2, Ag, W, and WC.