Ion trap in a semiconductor chip

A method of making an ion trap device, comprising:

• providing a substrate layer comprised of a conductive material;
• disposing a first insulator layer on the substrate layer;
• disposing a first membrane layer comprised of a conductive material on the first insulator layer;
• disposing a second insulator layer on the first membrane layer;
• disposing a second membrane layer on the second insulator layer;
• back etching a bottom surface of the substrate layer to form a wedge portion defining a first substrate portion and a second spaced and opposed substrate portion, wherein a portion of a lower surface of the first insulator layer is exposed;
• plasma etching a top surface of the second membrane layer to expose a portion of the first membrane layer;
• plasma etching a portion of the first and second membrane layers and first and second insulator layers to expose a top surface of the substrate layer;
• disposing an electrical contact member on spaced and opposed locations of the first and second membrane layers and the substrate layer;
• plasma etching through an axis of the first and second membrane layers and the first and second insulator layers to define first, second, third and fourth membrane portions and first, second, third and fourth insulator portions, wherein an area defining a second aperture is formed between spaced and opposed first and second insulator portions, wherein an area defining a third aperture is formed between spaced and opposed first and second membrane portions;
• wherein an area defining a fourth aperture is formed between spaced and opposed third and fourth insulator portions, and wherein an area defining a fifth aperture is formed between spaced and opposed third and fourth membrane portions;
• and
• acid etching end portions of the first, second, third and fourth insulator portions such that the first, second, third and fourth membrane layers, respectively, are in a cantilever arrangement therewith.

A method of trapping at least one ion, comprising:

• providing opposing first and second electrode assemblies, with each assembly having at least three segmented cantilevered electrodes, with each cantilevered electrode segment having stacked upper and lower electrode members spaced apart by an insulating layer, with each electrode member having a proximate end with a contact pad and a distal end, with the first and second assemblies arranged in opposition with the electrode distal ends in proximity to one another to form a gap that defines a free-space ion-trap region wherein the at least one ion is trapped when an electrical potential is applied to the first and second electrode assemblies;
• introducing the at least one ion into the ion-trap region;
• and
• applying said electrical potential so as to trap the at least one ion in the ion-trap region.

A method of fabricating an ion trap device for trapping at least one ion, comprising:

• forming a first electrode assembly having at least three segmented cantilevered electrodes, including providing each cantilevered electrode segment with stacked upper and lower electrode members spaced apart by an insulating layer, with each electrode member having a proximate end with a contact pad and a distal end;
• and
• forming a second electrode assembly identical or substantially identical to the
• first electrode assembly so as to be arranged in opposition thereto with the electrode distal ends in proximity to one another to form a gap that defines a free-space ion-trap region wherein the at least one ion is trapped when an electrical potential is applied to the first and second electrode assemblies.