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US 7,410,918 B2Granted
Systems and methods for forming metal oxides using alcohols
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process, one or more alcohols, and one or more metal-containing precursor compounds.
Claims25
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly within a deposition chamber;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)Z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, R3, and R4 are each independently hydrogen or an organic group;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- and
- contacting the precursor compounds to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals, wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
9 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly within a deposition chamber;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2 R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, R3, and R4 are each independently hydrogen or an organic group;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the semi conductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein the metal oxide layer comprises two or more different metals, wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
10 more elements
A method of manufacturing a memory device structure, the method comprising:
- providing a substrate having a first electrode thereon;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, R3, and R4 are each independently hydrogen or an organic group;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate, wherein the metal oxide dielectric layer two or more different metals;
- and
- forming a second electrode on the dielectric layer, wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
11 more elements
Dependencies are inferred from the claim text.