Atomic layer deposited Zr-Sn-Ti-O films using TiI4
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Various structures having a dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor and a method of fabricating structures having such a dielectric film produce the structures with a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Dielectric films containing Zr—Sn—Ti—O formed by atomic layer deposition using TiI4 are thermodynamically stable such that the Zr—Sn—Ti—O will have minimal reactions with a silicon substrate or other structures during processing.
Claims25
A method comprising:
- forming an electronic device including forming a dielectric layer having a Zr—Sn—Ti—O film, the Zr—Sn—Ti—O film formed by atomic layer deposition using a TiI4 precursor.
A method comprising:
- forming a first conductive layer on a substrate;
- forming a dielectric layer containing a Zr—Sn—Ti—O film on the first conductive layer by atomic layer deposition using a TiI4 precursor;
- and
- forming a second conductive layer on the dielectric layer, wherein the first conductive layer, the second conductive layer, and the dielectric layer form a capacitor.
A method comprising:
- providing a processor;
- and
- coupling a memory to the processor to form an electronic system, wherein the memory includes at least one access transistor having a dielectric layer on a body region between a source region and a drain region, the dielectric layer containing a Zr—Sn—Ti—O film, wherein the Ti in the Zr—Sn—Ti—O is provided by atomic layer deposition using TiI4.
The method claim of 17, wherein forming a dielectric layer containing a Zr—Sn—Ti—O film on a body region includes forming the dielectric layer substantially as a solid solution of TiO2—ZrO2—SnO2.
The method claim of 17, wherein the Zr—Sn—Ti—O film includes an amorphous Zr—Sn—Ti—O film.
The method claim of 17, wherein the Sn in the Zr—Sn—Ti—O film is provided by atomic layer deposition using SnI1.
The method claim of 17, wherein the method includes forming a computer.
Dependencies are inferred from the claim text.