Method of forming carbon polymer film using plasma CVD

A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus, which comprises the steps of:

• placing a semiconductor device substrate in a CVD reaction chamber;
• vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more;
• γ is an integer including zero;
• X is O, N or F) having a boiling point of about 20° C. to about 350° C.;
• introducing said vaporized gas and CO2 gas or H2 gas into the CVD reaction chamber inside which the substrate is placed;
• and
• forming a hard mask comprising a hydrocarbon-containing polymer film on said substrate by plasma polymerization of said gas and controlling an extinction coefficient at 193 nm and a mechanical hardness of the forming hydrocarbon-containing polymer film at 0.38 or less and 0.5 GPa or higher, respectively, as a function of a flow rate of the CO2 gas or H2 gas.