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US 7,410,910 B2Granted
Lanthanum aluminum oxynitride dielectric films
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Electronic apparatus and methods of forming the electronic apparatus include a lanthanum aluminum oxynitride film on a substrate for use in a variety of electronic systems. The lanthanum aluminum oxynitride film may be structured as one or more monolayers. The lanthanum aluminum oxynitride film may be formed by atomic layer deposition.
Claims58
A method comprising:
- forming a lanthanum aluminum oxynitride film in an integrated circuit on a substrate including forming the lanthanum aluminum oxynitride film by atomic layer deposition, the atomic layer deposition having one or more cycles, each cycle including:
- performing one or more lanthanum/oxygen sequences;
- performing one or more aluminum/oxygen sequences;
- and
- performing one or more nitrogen/oxygen sequences using a nitrogen precursor and an oxygen reactant precursor to the nitrogen precursor in the nitrogen/oxygen sequences.
2 more elements
A method comprising:
- forming a lanthanum aluminum oxynitride film in an integrated circuit on a substrate including forming the lanthanum aluminum oxynitride film by atomic layer deposition using a tert-butylamine precursor in the atomic layer deposition.
A method comprising:
- forming a lanthanum aluminum oxynitride film in an integrated circuit on a substrate including forming the lanthanum aluminum oxynitride film by atomic layer deposition using an allylamine precursor in the atomic layer deposition.
A method comprising:
- forming a lanthanum aluminum oxynitride film in an integrated circuit on a substrate including forming the lanthanum aluminum oxynitride film by atomic layer deposition using a 1,1-dimethylhydrazine precursor in the atomic layer deposition.
A method comprising:
- forming a first electrode on a substrate;
- forming a dielectric layer containing a lanthanum aluminum oxynitride film, including forming the lanthanum aluminum oxynitride film by atomic layer deposition, the atomic layer deposition having one or more cycles, each cycle including:
- performing one or more lanthanum/oxygen sequences;
- performing one or more aluminum/oxygen sequences;
- and
- performing one or more nitrogen/oxygen sequences using a nitrogen precursor and an oxygen reactant precursor to the nitrogen precursor in the nitrogen/oxygen sequences, the dielectric layer disposed on and contacting the first electrode;
- and
- forming a second electrode on and contacting the dielectric layer.
5 more elements
A method comprising;
- forming a source and a drain of a transistor, the source and the drain separated by a channel;
- forming a dielectric layer above the channel, the dielectric layer containing a lanthanum aluminum oxynitride film, including forming the lanthanum aluminum oxynitride film by atomic layer deposition, the atomic layer deposition having one or more cycles, each cycle including:
- performing one or more lanthanum/oxygen sequences;
- performing one or more aluminum/oxygen sequences;
- and
- performing one or more nitrogen/oxygen sequences using a nitrogen precursor and an oxygen reactant precursor to the nitrogen precursor in the nitrogen/oxygen sequences;
- and
- forming a gate above the dielectric layer.
5 more elements
A method comprising:
- forming an array of memory cells in a substrate, a memory cell having a dielectric layer containing a lanthanum aluminum oxynitride film, including forming the lanthanum aluminum oxynitride film by atomic layer deposition, the atomic layer deposition having one or more cycles, each cycle including:
- performing one or more lanthanum/oxygen sequences;
- performing one or more aluminum/oxygen sequences;
- and
- performing one or more nitrogen/oxygen sequences using a nitrogen precursor and an oxygen reactant precursor to the nitrogen precursor in the nitrogen/oxygen sequences.
2 more elements
A method comprising:
- providing a controller;
- and
- coupling an integrated circuit to the controller, wherein the integrated circuit includes a dielectric layer containing a lanthanum aluminum oxynitride layer, the lanthanum aluminum oxynitride layer formed by atomic layer deposition, the atomic layer deposition having one or more cycles, each cycle including:
- performing one or more lanthanum/oxygen sequences;
- performing one or more aluminum/oxygen sequences;
- and
- performing one or more nitrogen/oxygen sequences using a nitrogen precursor and an oxygen reactant precursor to the nitrogen precursor in the nitrogen/oxygen sequences.
4 more elements
Dependencies are inferred from the claim text.