Functional device and method for producing the same, and image pickup device and method for producing the same
AssigneeFUJIFILM Corporation
InventorYasushi Araki
Life of this patent
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Abstract
A method of producing a functional device comprising an electrode layer provided as an upper layer of a layer containing an organic material, the layer being as a functional layer, wherein a step of patterning the electrode layer comprises a high speed etching step of etching the electrode layer at a rate of 10 nm/min or more.
Claims16
A method of producing a functional device comprising a light-transmitting electrode layer provided as an upper layer of a layer containing an organic material, the layer being as a functional layer, wherein a step of patterning the light-transmitting electrode layer comprises a high speed etching step of etching the electrode layer at a rate of 10 nm/min or more;
- wherein the etchant gas to be used at the high speed etching step comprises at least one of hydrogen iodide (HI), hydrogen bromide (HBr), hydrogen chloride (HCl), methane (CH4) and methanol (CH3OH);
- wherein the high speed etching step is terminated with the light-transmitting electrode left unetched in a predetermined amount and the patterning step comprises a low speed etching step of etching the remaining light-transmitting electrode at a rate lower than 10 nm/min after the high speed etching step;
- wherein the slow speed etching step is preceded by a step of etching by irradiation with argon ion.
A method of producing a functional device comprising an electrode layer provided as an upper layer of a layer containing an organic material, the layer being as a functional layer, wherein a step of patterning the electrode layer comprises a high speed etching step of etching the electrode layer at a rate of 10 nm/min or more;
- wherein the high speed etching step is terminated with the light-transmitting electrode left unetched in a predetermined amount and the patterning step comprises a low speed etching step of etching the remaining light-transmitting electrode at a rate lower than that of the high speed etching step after the high speed etching step;
- wherein the etchant gas to be used at the low speed etching step comprises at least one of HI, HBr, HCl, CH4, CH3OH, boron chloride (BCl3) and chlorine (Cl2);
- wherein the low speed etching step is preceded by a step of treating with a reducing plasma;
- wherein the treatment with a reducing plasma is followed by a step of etching by irradiation with argon ion.
A method of producing a functional device comprising an electrode layer provided as an upper layer of a layer containing an organic material, the layer being as a functional layer, wherein a step of patterning the electrode layer comprises a high speed etching step of etching the electrode layer at a rate of 10 nm/min or more;
- wherein the high speed etching step is terminated with the light-transmitting electrode left unetched in a predetermined amount and the patterning step comprises a low speed etching step of etching the remaining light-transmitting electrode at a rate lower than that of the high speed etching step after the high speed etching step;
- wherein the light-transmitting electrode comprises a first light-transmitting electrode and a second light-transmitting electrode stacked on the first light-transmitting electrode, the high speed etching step involves etching of the second light-transmitting electrode and the low speed etching step involves etching of the first light-transmitting electrode;
- wherein the second light-transmitting electrode comprises at least one of ITO, IZO, SnO2, ATO, ZnO and FTO and the first light-transmitting electrode comprises at least one of indium (In), tungsten (W), tantalum nitride (TaN), niobium (Nb), platinum (Pt) and gallium (Ga).
Dependencies are inferred from the claim text.