Defectivity and process control of electroless deposition in microelectronics applications
AssigneeEnthone Inc.
InventorsQingyun Chen, Charles Valverde, Vincent Paneccasio, Nicolai Petrov, Daniel Stritch, Christian Witt, Richard Hurtubise
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Abstract
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
Claims22
A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising:
- contacting the substrate with an electroless deposition composition comprising (a) a grain refiner comprising a grain refiner compound selected from the group consisting of a polyphosphoric acid, a polyphosphate salt, and a combination thereof wherein said grain refiner compound is a compound having a formula M(n+2)PnO(3n+1) or (MPO3)n, where M represents a counter ion, and n=3 to 600;
- and (b) a source of deposition ions selected from the group consisting of Co ions and Ni ions.
An electroless plating solution for plating a metal capping layer onto a metal-filled interconnect in a microelectronic device, the solution comprising:
- a source of deposition ions selected from the group consisting of Co ions and Ni ions;
- a reducing agent;
- and
- a grain refiner compound selected from the group consisting of a polyphosphoric acid, a polyphosphate salt, and a combination thereof wherein said grain refiner compound is a compound having a formula M(n+2)PnO(3n+1) or (MPO3)n, where M represents a counter ion, and n=2 to 600.
Dependencies are inferred from the claim text.