Methods of fabricating interconnects for semiconductor components

A method of fabricating an interconnect, comprising:

• forming an opening extending entirely through a monocrystalline silicon substrate, the opening having sidewalls;
• depositing a first material along the sidewalls of the opening to narrow the opening, the depositing utilizing one or more cycles of a process which forms less than or equal to about 10 Å of the first material per cycle and which exposes the monocrystalline silicon substrate to a temperature of less than or equal to about 200° C.;
• forming a solder-wetting material within the opening and along the first material;
• forming solder along the solder-wetting material to fill the opening with solder;
• and
• wherein the first material is a metal nitride and wherein the process is conducted in a reaction chamber utilizing:
• a first precursor containing the metal of the metal nitride;
• a second precursor containing the nitrogen of the metal nitride;
• and
• provision of the first and second precursors in the reaction chamber at different and substantially non-overlapping time intervals relative to one another.

A method of fabricating an interconnect, comprising:

• forming an opening extending entirely through a monocrystalline silicon substrate, the opening having sidewalls;
• depositing a first material along the sidewalls of the opening to narrow the opening, the depositing utilizing one or more cycles of a process which forms less than or equal to about 10 Å of the first material per cycle and which exposes the monocrystalline silicon substrate to a temperature of less than or equal to about 200° C.;
• forming a solder-wetting material within the opening and along the first material;
• forming solder along the solder-wetting material to fill the opening with solder;
• and
• wherein the first material comprises metal nitride.

A method of fabricating an interconnect, comprising:

• forming an opening extending entirely through a monocrystalline silicon substrate, the opening having sidewalls;
• depositing a first material along the sidewalls of the opening to narrow the opening, the depositing utilizing one or more cycles of a process which forms less than or equal to about 10 Å of the first material per cycle and which exposes the monmcrystalline silicon substrate to a temperature of less than or equal to about 200° C.:
• forming a solder-wetting material within the opening and along the first material;
• forming solder along the solder-wetting material to fill the opening with solder;
• and
• wherein the first material comprises one or more of titanium nitride, tungsten nitride, tantalum nitride and hafnium nitride.

A method of fabricating an interconnect, comprising:

• forming an opening extending entirely through a monocrystalline silicon substrate, the opening having sidewalls;
• depositing a first material along the sidewalls of the opening to narrow the opening, the depositing utilizing one or more cycles of a process which forms less than or equal to about 10 Å of the first material per cycle and which exposes the component to a temperature of less than or equal to about 200° C.;
• forming a solder-wetting material within the opening and along the first material;
• forming solder along the solder-wetting material to fill the opening with solder;
• and
• wherein the forming of the solder-wetting material comprises electroless plating of the solder-wetting material.