Semiconductor device having low-k dielectric film in pad region and method for manufacture thereof
AssigneeSamsung Electronics Co., Ltd.
InventorHong-Jae Shin
Life of this patent
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Abstract
A low-k dielectric film is formed on an entire surface of a substrate having a pad region and a circuit region. A resist pattern is formed on the low-k dielectric film, and an opening is formed in the low-k dielectric film of the pad region using the resist pattern as a mask. A silicon oxide film having strength higher than the low-k dielectric film is formed in the opening using liquid-phase deposition method. Wirings are formed in the silicon oxide film of the pad region and in the low-k dielectric film of the circuit region using damascene method.
Claims14
A method for manufacturing a semiconductor device having a pad region and a circuit region, comprising:
- forming a low-k dielectric film on an entire surface of a substrate, the low-k dielectric film having dielectric constant of no more than 3;
- forming an opening in the low-k dielectric film of the pad region, wherein forming the opening includes:
- forming a second insulating film on the low-k dielectric film;
- and
- forming a resist pattern on the second insulating film;
- forming a first insulating film having higher strength than the low-k dielectric film in the opening;
- and
- forming wirings on the first insulating film of the pad region and on the low-k dielectric film of the circuit region using a damascene process.
A method for manufacturing a semiconductor device having a pad region and a circuit region, comprising:
- forming a low-k dielectric film on an entire surface of a substrate, the low-k dielectric film having dielectric constant of no more than 3;
- forming an opening in the low-k dielectric film of the pad region, including:
- forming a second insulating film on the low-k dielectric film;
- forming a resist pattern on the second insulating film;
- and
- patterning the second insulating film and the low-k dielectric film using the resist pattern as mask;
- forming a first insulating film having higher strength than the low-k dielectric film in the opening, wherein the first insulating film has a surface further from the substrate than a surface of the low-k dielectric film and is closer to the substrate than a surface of the resist pattern;
- and
- forming wirings on the first insulating film of the pad region and on the low-k dielectric film of the circuit region using a damascene process.
A method for manufacturing a semiconductor device having a pad region and a circuit region, comprising:
- forming a low-k dielectric film on an entire surface of a substrate, the low-k dielectric film having dielectric constant of no more than 3;
- forming an opening in the low-k dielectric film of the pad region, wherein forming the opening in the low-k dielectric film of the pad region includes:
- forming a second insulating film on the low-k dielectric film;
- forming a resist pattern on the second insulating film;
- and
- patterning the second insulating film and the low-k dielectric film using the resist pattern as mask;
- forming a first insulating film having higher strength than the low-k dielectric film in the opening;
- removing the resist pattern after forming the first insulating film in the opening;
- and
- forming wirings on the first insulating film of the pad region and on the low-k dielectric film of the circuit region using a damascene process.
Dependencies are inferred from the claim text.