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US 7,410,894 B2Granted
Post last wiring level inductor using patterned plate process
AssigneeInternational Business Machines Corporation
InventorsAnil K. Chinthakindi, Douglas D. Coolbaugh, John E. Florkey, Jeffrey P. Gambino, Zhong-Xiang He, Anthony K. Stamper, Kunal Vaed
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Abstract
A method of forming a semiconductor structure, and the semiconductor structure so formed, wherein a transmission line, such as an inductor, is formed on a planar level above the surface of a last metal wiring level.
Claims8
A method of forming a semiconductor substrate, comprising:
- providing a substrate having at least one metal wiring level within the substrate;
- depositing a first insulative layer on a surface of the substrate;
- forming a wire bond pad within the first insulative layer;
- depositing a second insulative layer on the first insulative layer and the wire bond pad;
- and
- forming an inductor within the second insulative layer using a patterned plate process, wherein the inductor is formed substantially co-planar with at least a portion of the wire bond pad, wherein forming the inductor further comprises:
- depositing a liner on the surface of the substrate and on a surface within an at least one opening within the second insulative layer;
- depositing a seed layer on a surface of the liner;
- removing a portion of the seed layer from the surface of the substrate, leaving the seed layer within the at least one opening within the second insulative layer;
- depositing a conductive material within the at least one opening within the second insulative layer, such that the conductive material extends above the surface of the substrate;
- and
- planarizing the surface of the substrate to remove excess conductive material extending above the surface of the substrate.
9 more elements
Dependencies are inferred from the claim text.