Method of fabricating a poly-silicon thin film
AssigneeIndustrial Technology Research Institute
InventorsYu-Cheng Chen, Jia-Xing Lin, Hung-Tse Chen
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Abstract
A silicon layer and a heat-retaining layer are formed on a substrate in turn, and a laser beam with a sharp energy density gradient is next utilized to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the Si layer. The heat-retaining layer provides additional heating-enhancement function for the Si layer in crystallization so as to increase the super lateral growth length. Then, the laser beam is repeatedly moved to irradiate the substrate to finish the crystallization process for the full substrate.
Claims10
A method of fabricating a polysilicon (poly-Si) thin film, comprising the steps of:
- forming a silicon layer on a substrate;
- forming a heat-retaining layer directly on the silicon layer, wherein the entire bottom surface of the heat-retaining layer is in direct contact with the entire top surface of the silicon layer;
- patterning at least one laser beam to produce a patterned laser beam with an energy density gradient occurring at the edges of the patterned laser beam, wherein the range of the energy density gradient is between 400 J/cm3 and 3000 J/cm3;
- irradiating the patterned laser beam with the energy density gradient to the heat-retaining layer so as to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the silicon layer;
- and
- repeatedly moving the patterned laser beam to irradiate different positions of the substrate until the crystallization process for the full substrate is finished.
Dependencies are inferred from the claim text.