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US 7,410,888 B2Granted
Method for manufacturing strained silicon
AssigneeTexas Instruments Incorporated
InventorsRichard L. Knipe, Grady L. Endsley
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Abstract
In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature, and releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.
Claims5
A method for manufacturing strained silicon, comprising:
- bending a silicon wafer against a curved surface of a platen such that a curvature is induced in the silicon wafer;
- depositing an epitaxial layer of silicon upon an upper surface of the silicon layer while the silicon wafer is under the induced curvature, wherein the curvature is induced by bending the silicon wafer between the curved surface of the platen and a vacuum chuck;
- and
- releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer wherein the strain induced the epitaxial layer is related to the curvature induced in the silicon wafer by Stoney's Equation.
1 more element
Dependencies are inferred from the claim text.