Method for fabricating capacitor of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorSoo Jae Lee
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Abstract
Disclosed herein is a method for fabricating a capacitor of a semiconductor device. The method comprises the steps of forming an interlayer insulating film on a semiconductor substrate, forming contact plugs connected to the semiconductor substrate though the interlayer insulating film, forming a first storage node oxide film include a PSG film on the contact plugs, cleaning the semiconductor substrate on which the first storage node oxide film include a PSG film is formed, using isopropyl alcohol (IPA), to remove water-soluble compounds, and forming a second storage node oxide film on the first storage node oxide film.
Claims3
A method for fabricating a capacitor of a semiconductor device, comprising:
- forming an interlayer insulating film on a semiconductor substrate;
- forming contact plugs connected to the semiconductor substrate through the interlayer insulating film;
- forming a first storage node oxide film including a phosphorous silicate glass (PSG) film on the contact plugs;
- cleaning the semiconductor substrate on which the first storage node oxide film is formed with isopropyl alcohol (IPA), thereby removing water-soluble compounds formed by a reaction between moisture and out-diffused phosphorous from the PSG film;
- and
- forming a second storage node oxide film on the first storage node oxide film after cleaning the semiconductor substrate with isopropyl alcohol.
Dependencies are inferred from the claim text.