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US 7,410,849 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorYasuhiko Takemura
Life of this patent
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Abstract
A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direction is roughly parallel to a current-flow between a source and a drain, and TFT provided such that the crystallization direction is roughly vertical to a current-flow between a source and a drain are manufactured. Therefore, TFT capable of conducting a high speed operation and TFT having a low leak current are formed on the same substrate.
Claims17
A method for manufacturing a semiconductor device comprising:
- forming a first insulating film comprising silicon oxide over a glass substrate:
- forming a semiconductor film over the first insulating film;
- crystallizing the semiconductor film, wherein crystals of the semiconductor film extend in a direction in parallel with a surface of the first insulating film, and wherein a width of the crystals is 0.5 or more times the thickness of the semiconductor film;
- patterning the crystallized semiconductor film to form a semiconductor island having a source region, a drain region and a channel region;
- forming a second insulating film comprising silicon oxide covering the semiconductor island;
- forming a gate electrode over a portion of the semiconductor island with the second insulating film interposed therebetween;
- forming a third insulating film comprising silicon oxide covering the gate electrode and the second insulating film;
- forming a contact hole in the third insulating film reaching the source region and the drain region of the semiconductor island;
- and
- forming a wiring comprising a first layer and a second layer over the third insulating film, wherein the first layer comprises titanium and the second layer comprises aluminum.
7 more elements
A method for manufacturing a semiconductor device comprising:
- forming a first insulating film comprising silicon oxide over a glass substrate;
- forming a semiconductor film over the first insulating film;
- crystallizing the semiconductor film, wherein crystals of the semiconductor film extend in a direction in parallel with a surface of the first insulating film, and wherein a width of the crystals is 0.5 or more times the thickness of the semiconductor film;
- patterning the crystallized semiconductor film to form a semiconductor island having a source region, a drain region and a channel region;
- forming a second insulating film comprising silicon oxide covering the semiconductor island;
- forming a gate electrode over a portion of the semiconductor island with the second insulating film interposed therebetween;
- forming a third insulating film comprising silicon oxide covering the gate electrode and the second insulating film;
- forming a contact hole in the third insulating film reaching the source region and the drain region of the semiconductor island;
- and
- forming a wiring comprising a first layer and a second layer over the third insulating film, wherein the first layer comprises titanium and the second layer comprises aluminum;
- wherein the semiconductor island has no grain boundaries against carriers flowing between the source region and the drain region.
8 more elements
A method for manufacturing a semiconductor device comprising:
- forming a first insulating film comprising silicon oxide over a glass substrate;
- forming a semiconductor film over the first insulating film;
- crystallizing the semiconductor film, wherein crystals of the semiconductor film extend in a direction in parallel with a surface of the first insulating film, and wherein a width of the crystals is 0.5 or more times the thickness of the semiconductor film;
- patterning the crystallized semiconductor film to form at least a first semiconductor island and a second semiconductor island;
- forming a second insulating film comprising silicon oxide covering the first semiconductor island and the second semiconductor island;
- forming a first gate electrode over a portion of the first semiconductor island with the second insulating film interposed therebetween, and a second gate electrode over a portion of the second semiconductor island with the second insulating film interposed therebetween;
- adding a first impurity element into the first semiconductor island by using the first gate electrode as a mask in order to form a N-channel type thin film transistor;
- adding a second impurity element into the second semiconductor island by using the second gate electrode as a mask in order to form a P-channel type thin film transistor;
- forming a third insulating film comprising silicon oxide covering the first gate electrode, the second gate electrode and the second insulating film;
- and
- forming a wiring comprising a first layer and a second layer over the third insulating film, wherein the first layer comprises titanium and the second layer comprising aluminum,
- wherein a carrier flow direction in the first semiconductor island is parallel to a carrier flow direction in a second semiconductor island.
9 more elements
Dependencies are inferred from the claim text.