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US 7,410,818 B2Granted
Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor
AssigneeNEC LCD Technologies, Ltd.
InventorsMitsuma Ohishi, Satoshi Kimura
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Abstract
A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode and a width of the drain electrode located over the gate electrode. Irregularities are formed in a width direction of the semiconductor film on both edge portions in the channel region.
Claims9
A method of manufacturing a thin film transistor comprising the steps of:
- forming a gate electrode on an insulating substrate;
- forming a semiconductor film and a conductive film on said insulating substrate and on said gate electrode with interposing a gate insulating film between both said insulating substrate and said gate electrode, and said semiconductor film;
- forming a photo-resist film above said semiconductor film and above said conductive film;
- patterning said conductive film and said semiconductor film by use of said photo-resist film as a mask and thereby forming a conductive film and a semiconductor film in island shapes;
- forming a source electrode and a drain electrode isolated from each other by patterning said conductive film;
- and
- subjecting said semiconductor film between said source electrode and said drain electrode to channel etching,
- wherein irregularities are formed on both edges of said semiconductor film provided
- along extending direction and in a direction orthogonal to the extending direction, and
- a concave portion of the irregularities is located outside a region sandwiched by a pair of virtual straight lines linking both ends of opposite edges of said source electrode and said drain electrode.
7 more elements
Dependencies are inferred from the claim text.