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US 7,410,812 B2Granted
Manufacture of semiconductor device having insulation film of high dielectric constant
AssigneeFujitsu Limited
InventorMasaomi Yamaguchi
Life of this patent
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Abstract
A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf1-xAlxO:N film (0.1<x<0.3) having a higher specific dielectric constant than that of silicon oxide, and incorporating N, by thermal CVD. The method can form an oxide film of Hf1-xAlxO (0<x<0.3) having desired characteristics, as a gate insulation film.
Claims9
A method of manufacturing a semiconductor device comprising the steps of:
- (a) heating a silicon substrate in a reaction chamber wherein said silicon substrate is heated to a temperature of 400°C. to 600°C.;
- and
- (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of said heated silicon substrate, to deposit on said silicon substrate a high specific-dielectric-constant insulation film having a higher specific dielectric constant than that of silicon oxide, by thermal CVD, and said nitridation enhancing gas is a gas containing hydrogen, wherein said source gas is a gas containing organic metal compound of Hf, and organic metal compound of Al, in the carrier gas.
Dependencies are inferred from the claim text.