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AssigneeHitachi Chemical Company, Ltd.
InventorsNaoyuki Koyama, Kouji Haga, Masato Yoshida, Keizou Hirai, Toranosuke Ashizawa, Youiti Machii
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The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
A CMP abrasive consisting essentially of cerium oxide particles, a dispersant, water, and, additionally, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of said film to be polished, wherein the organic polymer is a compound containing at least one atom having an unpaired electron in a molecular structure, and wherein the abrasive is capable of being used in forming shallow trench isolation, and is adapted to polish an inorganic insulating film having unevenness on a surface thereof.
Dependencies are inferred from the claim text.