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US 7,408,238 B2Granted
Photodiode array and production method thereof, and radiation detector
AssigneeHamamatsu Photonics K.K.
InventorKatsumi Shibayama
Life of this patent
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Abstract
A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposite surface side to an incidence surface of light L to be detected, in the n-type silicon substrate 3. Spacers 6 having a predetermined height are provided in a region not corresponding to regions where the photodiodes 4 are formed, on the incidence surface side of the light L to be detected, in the n-type silicon substrate 3.
Claims12
A photodiode array comprising a semiconductor substrate,
- wherein a plurality of photodiodes are formed in array on an opposite surface side to an incidence surface of light to be detected, in the semiconductor substrate,
- wherein a projection having a predetermined height is provided in a region not corresponding to regions where the photodiodes are formed, on a side of the incidence surface of the light to be detected, in the semiconductor substrate, and
- wherein the semiconductor substrate is provided with an impurity region between the photodiodes adjacent to each other, for separating the photodiodes from each other.
A photodiode array comprising a semiconductor substrate,
- wherein a plurality of photodiodes are formed in array on an opposite surface side to an incidence surface of light to be detected, in the semiconductor substrate,
- wherein a projection having a predetermined height is provided in a region not corresponding to regions where the photodiodes are formed, on a side of the incidence surface of the light to be detected, in the semiconductor substrate, and
- wherein a high-impurity-concentration layer of the same conductivity type as the semiconductor substrate is formed on the incidence surface side of the light to be detected, in the semiconductor substrate.
A photodiode array comprising a semiconductor substrate,
- wherein a plurality of photodiodes are formed in array on an opposite surface side to an incidence surface of light to be detected, in the semiconductor substrate,
- wherein a projection having a predetermined height is provided in a region not corresponding to regions where the photodiodes are formed, on a side of the incidence surface of the light to be detected, in the semiconductor substrate, and
- a scintillator panel arranged opposite to the incidence surface of the light to be detected, in the photodiode array, and arranged to emit light with incidence of radiation.
Dependencies are inferred from the claim text.