Metal-insulator transition switching transistor and method for manufacturing the same

A metal-insulator transition switching transistor, comprising:

• a silicon substrate;
• a gate electrode formed directly on the substrate;
• a gate insulation film on the gate electrode and the silicon substrate;
• an abrupt metal-insulator-transition channel layer on the gate insulation film, wherein the abrupt metal-insulator-transition channel layer changes from an insulator phase to a metal phase abruptly, or vice versa, depending on a variation of an electric field;
• and
• a source and a drain being contacted with both sides of the abrupt metal-insulator-transition channel layer, respectively.