Back to results
US 7,408,214 B2Granted
Dynamic random access memory trench capacitors
AssigneeAmberWave Systems Corporation
InventorsMayank Bulsara, Matthew T. Currie, Anthony J. Lochtefeld
Life of this patent
Estimating the term…
Abstract
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
Claims26
A semiconductor structure comprising:
- a trench capacitor, including:
- a trench formed in a semiconductor substrate, the trench having an interior surface and being disposed entirely within a region of the substrate substantially free of germanium,
- an outer plate proximate a sidewall of the trench, the outer plate comprising a first conductive material, an insulating layer disposed proximate the outer plate, and
- a second conductive material disposed in the trench proximate the insulating layer, the second conductive material defining an inner plate;
- and
- a device formed on the substrate, the device comprising a strained channel.
3 more elements
Dependencies are inferred from the claim text.