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US 7,408,208 B2Granted
III-nitride power semiconductor device
AssigneeInternational Rectifier Corporation
InventorThomas Herman
Life of this patent
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Abstract
A III-nitride power semiconductor device that includes a two dimensional electron gas having a low field region under the gate thereof.
Claims20
A power semiconductor device, comprising:
- a III-nitride heterojunction body that includes a first III-nitride body and a second III-nitride body having a different band gap than that of said first III-nitride body;
- a first power electrode coupled to said second III-nitride body;
- a second power electrode coupled to said second III-nitride body;
- a gate arrangement disposed between said first and said second power electrodes;
- and
- a conductive channel that includes a two-dimensional electron gas that in a conductive state includes a low field region under said gate arrangement that is at least twice as wide as said gate arrangement and less conductive than its adjacent regions.
3 more elements
Dependencies are inferred from the claim text.