Polarized semiconductor light emitting device

An apparatus comprising:

• an epitaxial structure comprising an active region having upper and lower surfaces sandwiched between an n-type region and a p-type region, the active region configured to emit light when forward biased;
• a non-absorbing polarizer having a surface that receives light, the surface of the non-absorbing polarizer being substantially parallel to the upper and lower surfaces of the active region, the non-absorbing polarizer transmitting light having a desired polarization orientation and reflecting light that does not have the desired polarization orientation;
• and
• a means for randomizing coupled to the active region and the non-absorbing polarizer, the means for randomizing positioned to receive light emitted from the active region before the light is received by the non-absorbing polarizer and to receive light reflected from the non-absorbing polarizer, the means for randomizing at least partially randomizes the polarization state of the light.

An apparatus comprising:

• a light emitting diode that emits light from a light emitting surface;
• a non-absorbing polarizer having a surface that receives light, the surface of the non-absorbing polarizer being substantially parallel to the light emitting surface of the light emitting diode, the non-absorbing polarizer transmitting light having a desired polarization orientation and reflecting light that does not have the desired polarization orientation;
• a randomizing element coupled to the light emitting diode and the non-absorbing polarizer, the randomizing element positioned to receive light emitted from light emitting diode and reflected from the non-absorbing polarizer, the randomizing element at least partially randomizes the polarization state of the light;
• and
• a microdisplay disposed in a path of light transmitted by the non-absorbing polarizer.

An apparatus comprising:

• an epitaxial structure comprising an active region sandwiched between an n-type region and a p-type region, the active region configured to emit light when forward biased;
• a non-absorbing polarizer coupled to the active region, the non-absorbing polarizer transmitting light having a desired polarization orientation and reflecting light that does not have the desired polarization orientation;
• and
• a randomizing element coupled to the active region and the non-absorbing polarizer, the randomizing element positioned to receive light emitted from the active region and reflected from the non-absorbing polarizer, the randomizing element at least partially randomizes the polarization state of the light, wherein the randomizing element is a roughened surface that scatters light;
• wherein the apparatus is a light emitting diode that further comprises a substrate, wherein a surface of the substrate is the roughened surface that is disposed between the non-absorbing polarizer and the active region.

An apparatus comprising:

• an epitaxial structure comprising an active region sandwiched between an n-type region and a p-type region, the active region configured to emit light when forward biased;
• a non-absorbing polarizer coupled to the active region, the non-absorbing polarizer transmitting light having a desired polarization orientation and reflecting light that does not have the desired polarization orientation;
• and
• a randomizing element coupled to the active region and the non-absorbing polarizer, the randomizing element positioned to receive light emitted from the active region and reflected from the non-absorbing polarizer, the randomizing element at least partially randomizes the polarization state of the light, wherein the randomizing element is a birefringent material.