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US 7,408,187 B2Granted
Low-voltage organic transistors on flexible substrates using high-gate dielectric insulators by room temperature process
AssigneeMassachusetts Institute of Technology
InventorsIl-Doo Kim, Yong Woo Choi, Harry L. Tuller
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Abstract
A transistor device includes a transparent substrate. A high K dielectric is formed on the transparent substrate and transferred onto a flexible substrate. An organic transistor is formed on the high K dielectric.
Claims19
A transistor device comprising:
- a transparent substrate;
- a high K dielectric formed on said transparent substrate and transferred onto a flexible substrate, said high K dielectric comprises a combination of BZN, CCTO and Mg, Ni or Mn-doped BST;
- an organic substrate formed on said high K dielectric.
A transistor device comprising:
- a plastic substrate;
- a high-K dielectric layer formed on said plastic substrate, said high K dielectric layer comprises a combination of BZN, CCTO and Mg, Ni or Mn-doped BST;
- and
- an organic semiconductor layer formed on said high-K dielectric layer.
1 more element
A transistor device comprising:
- a glass or transparent substrate;
- a transfer layer disposed over the glass/transparent substrate;
- a high-K dielectric layer disposed over the transfer layer, said high K dielectric layer comprises a combination of BZN, CCTO and Mg, Ni or Mn-doped BST;
- a high-K dielectric layer including transfer layer transferred onto a receiver flexible polymer substrate;
- and
- an organic semiconductor layer formed on the transferred high-K dielectric layer.
3 more elements
Dependencies are inferred from the claim text.