Pixel with spatially varying metal route positions

A method of configuring an image sensor having an array of pixels arranged into rows and columns, the array having an optical center plane substantially parallel to the columns, and each pixel including a photodetector, a transistor region, first and second metal segments positioned in a first metal layer, a further metal segment positioned in a second metal layer, and an interconnect element coupled between the further metal segment and the second metal segment, the second metal segment coupled to the transistor region, the method comprising:

• determining a base pixel configuration wherein the further metal segment is positioned a segment distance and the interconnect element is positioned an interconnect distance from an edge of the pixel proximate to the photodetector, the segment distance being substantially equal to the interconnect distance;
• and
• for each pixel of the array:
• determining a shift distance of the pixel based on a distance of the pixel from the optical center plane;
• decreasing the segment distance and the interconnect distance by the shift distance if the photodetector is positioned between the transistor region and the optical center plane to shift the further metal segment to a shifted location, and
• increasing the segment distance by the shift distance if the transistor region is positioned between the photodetector and the optical center plane to shift the further metal segment to the shifted location;
• determining if the first metal segment obstructs a path in the first metal layer between the second metal segment and an area of the first metal layer coincident with the shifted location of the further metal segment;
• and
• if the first metal segment obstructs the oath between the second metal segment and the area of the first metal layer coincident with the shifted location of the further metal segment, coupling a span in the second metal layer between the further metal segment and the interconnect element.

An image sensor comprising:

• an array of pixels arranged into rows and columns, the array having an optical center plane substantially parallel to the columns, and each pixel including a photodetector, a transistor region, first and second metal segments positioned in a first metal layer, at least one further metal segment positioned in a second metal layer, an interconnect element coupled between the at least one further metal segment and the second metal segment, and having a first pixel edge proximate to the photodetector;
• wherein each pixel of at least one column of the array proximate to the optical center plane has a center configuration wherein the at least one further metal segment is positioned a segment distance from the first pixel edge and the interconnect element is positioned an interconnect distance from the first pixel edge;
• wherein for each pixel of the remaining columns of the array to one side of the at least one column, the at least one further metal segment is positioned at the segment distance minus a shift distance and the interconnect element is positioned at the interconnect distance minus the shift distance from the corresponding first pixel edge;
• wherein for each pixel of the remaining columns of the array to the other side of the at least one column, the at least one further metal segment is positioned at the segment distance plus the shift distance and the interconnect element is positioned at the interconnect distance from the corresponding first pixel edge, and
• wherein, for each pixel having a path in the first metal layer between the second metal segment and an area in the first metal layer coincident with the at least one further metal segment obstructed by the first metal segment, a span element is positioned in the second metal layer that extends between the at least one further metal segment and the interconnect element;
• and
• wherein the shift distance is based on a distance of the pixel from the optical center plane.