CMOS-compatible light emitting aperiodic photonic structures

A method of fabricating an aperiodic multilayer structure, comprising:

• (a) depositing a thin film layer of SiO2 onto a substrate;
• (b) depositing a thin film layer of SiyNx upon the layer of SiO2;
• (c) depositing additional layers of SiO2, layers of SiN3, and layers of Si3N4, to form an aperiodic multilayer structure wherein a material composition pattern of the additional layers of SiO2, SiN3, and Si3N4 forming the aperiodic multilayer structure is aperiodic;
• and
• (d) thermally annealing the aperiodic multilayer structure formed by depositing the additional layers of SiO2, SiN3, and Si3N4.

A method of fabricating an aperiodic multilayer structure, comprising:

• (a) depositing a thin film layer of SiO2 onto a substrate;
• (b) depositing a thin film layer of SiyNx upon the layer of SiO2;
• (c) depositing additional layers of SiO2, layers of SiN3, and layers of Si3N4, to form an aperiodic multilayer structure wherein both a material composition pattern of the additional layers of SiO2, SiN3, and Si3N4 and a thickness pattern of the additional layers of SiO2, SiN3, and Si3N4 forming the aperiodic multilayer structure is aperiodic;
• and
• (d) thermally annealing the aperiodic multilayer structure formed by depositing the additional layers of SiO2, SiN3, and Si3N4.