Liquid precursors for the CVD deposition of amorphous carbon films

A method for processing a substrate in a processing chamber, comprising:

• positioning the substrate in a processing chamber;
• introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and alpha-terpinene;
• generating a plasma of the processing gas by applying power from a dual-frequency RF source;
• depositing an amorphous carbon layer on the substrate;
• etching the amorphous carbon layer to form a patterned amorphous carbon layer;
• removing the one or more amorphous carbon layers;
• and
• depositing a conductive material on the surface of the substrate.

A method for processing a substrate in a processing chamber, comprising:

• positioning the substrate in a processing chamber;
• introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and alpha-terpinene;
• generating a plasma of the processing gas by applying power from a dual-frequency RF source;
• depositing an amorphous carbon layer on the substrate defining a pattern in at least one region of the one or more amorphous carbon layers;
• and
• forming feature definitions in the one or more dielectric layers by the pattern formed in the at least one region of the one or more amorphous carbon layers.