US 7,407,881 B2Granted

Semiconductor device and method for manufacturing the same

AssigneeDongbu Electronics Co., Ltd.

InventorHan-Choon Lee

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Abstract

Enhanced step coverage and reduced resistivity of a TaSiN layer may be achieved when a semiconductor device is manufactured by: forming an interlayer insulating layer on a semiconductor substrate, the interlayer insulating layer having a contact hole that partially exposes the substrate; depositing a TaN thin film on the interlayer insulating layer and in the contact hole using a reaction gas containing a Ta precursor and a nitrogen source gas; removing impurities from the TaN thin film; forming a TaSiN thin film by reacting the impurity-removed TaN thin film with a silicon source gas, and repeating the TaN-depositing, impurity-removing, and silicon source gas-reacting steps.

Claims17

Dependent claims

A method for manufacturing a semiconductor device, comprising:

(a) forming an insulating layer on a semiconductor substrate, the insulating layer having a contact hole that partially exposes the substrate;
(b) depositing a TaN thin film on the insulating layer including in the contact hole by atomic layer deposition (ALD) using a reaction gas containing a Ta precursor and a nitrogen source gas, wherein depositing the TaN thin film comprises thermally decomposing the Ta precursor;
(c) removing impurities from the TaN thin film;
(d) forming a TaSiN thin film by reacting the impurity-removed TaN thin film with a silicon source gas;
and
(e) repeating steps (b) and (d) at least once to form a diffusion barrier comprising a plurality of TaSiN thin films.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/177,921Filed 8 Jul 2005
Priority: KR 10-2004-00533889 Jul 2004
Published: US 2006/0006542 A112 Jan 2006
Granted: 5 Aug 2008
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10W 20/035
In openings in dielectrics: combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
H10P 14/432
Chemical deposition, e.g. chemical vapour deposition [CVD]: using selective deposition
H10W 20/048
By introducing additional elements therein: by using plasmas or gaseous environments, e.g. by nitriding
H10W 20/0523
By treatments not introducing additional elements therein: by irradiating with ultraviolet or particle radiation

Family

US 2006/0006542 A1Pre-grant publication · published 12 Jan 2006
US 7,407,881 B2This patent

From the US filing history. Foreign family members aren’t listed.

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