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US 7,407,880 B2Granted
Semiconductor device and manufacturing process therefore
AssigneeNEC Electronics Corporation
InventorKatsuya Izumi
Life of this patent
Estimating the term…
Abstract
A semiconductor device which can prevent a leak current between a silicide layer on a polysilicon and another part, as well as a manufacturing process therefor. The semiconductor device includes neighboring n- and p-type polysilicons; and a silicide layer thereon extending from the n-type polysilicon to the p-type polysilicon. The silicide layer is formed over the upper surfaces of the n- and p-type polysilicons except the periphery thereof.
Claims20
A semiconductor device comprising:
- neighboring n- and p-type polysilicons;
- and
- a silicide layer thereon extending from said n-type polysilicon to said p-type polysilicon,
- wherein said silicide layer is formed over upper surfaces of said n- and p-type polysilicons except a periphery thereof.
1 more element
A semiconductor device comprising:
- neighboring n- and p-type polysilicons;
- and
- a silicide layer thereon extending from said n-type polysilicon to said p-type polysilicon,
- wherein said silicide layer is formed on a border region of said n- and p- type polysilicons without contacting any edges of said n- and p-type polysilicons.
1 more element
A process for manufacturing a semiconductor device comprising:
- forming neighboring n- and p-type polysilicons;
- and
- forming a silicide layer extending from said n-type polysilicon to said p-type polysilicon, said silicide layer being formed on a border region of said n- and p-type polysilicons without contacting any edges of said n- and p-type polysilicons.
Dependencies are inferred from the claim text.