Low resistance contact structure and fabrication thereof

A method of fabricating a semiconductor structure, the method comprising:

• fabricating at least one semiconductor device;
• and
• fabricating one or more stud contact structure interfacing with one or more contact areas of said semiconductor device,
• wherein said fabricating one or more stud contact structure comprises:
• forming one or more openings in a layer of dielectric material, at least one of said openings exposes a silicide contact surface of said semiconductor device;
• applying a chemical vapor deposition (CVD) process to create a first TiN liner over said at least one of said openings;
• applying a physical vapor deposition (PVD) process to create a second TiN liner over said first TiN liner;
• and
• filling said at least one of said openings, on top of said second TiN liner, with a conductive material.
• wherein creating said second TiN liner comprises sputter-depositing a layer of Ti onto said first TiN liner, and converting said layer of Ti into said second TiN liner through a forming gas annealing process, using a gas mixture of about 5-10% atomic H2 and 90-95% atomic N2, at a temperature of about 500° C. to about 650° C, and for about 15 minutes to about 1 hour.

A method of creating a structure, comprising:

• fabricating at least one contact opening in a layer of dielectric material on top of a semiconductor device, said contact opening exposes a silicide contact surface of said semiconductor device;
• forming a first TiN film through a chemical vapor deposition process, said first TiN film lining said contact opening;
• forming a second TiN film through a physical vapor deposition process, said second TiN film lining said first TiN film;
• and
• filling said contact opening, on top of said second TiN film, with a conductive material,
• wherein forming said second TiN liner comprises directionally sputtering Ti onto said first TiN liner and subsequently converting said sputtered Ti into said second TiN liner through a post-deposition treatment.