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US 7,407,873 B2Granted
Method of manufacturing semiconductor device
AssigneeAdvanced LCD Technologies Development Center Co., Ltd.
InventorsHiroki Nakamura, Terunori Warabisako, Masakiyo Matsumura
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes irradiating a region to be crystallized of a non-monocrystalline semiconductor film with laser beam modulated by an optical modulator to have light intensity distribution having a minimum light intensity line or minimum light intensity spot to crystallize the region, and heating the crystallized region by irradiating light from a flash lamp onto the crystallized region.
Claims5
A method of manufacturing a semiconductor device, comprising:
- irradiating a region to be crystallized of a non-monocrystalline semiconductor film with laser beam modulated by an optical modulator to have light intensity distribution having a minimum light intensity line or minimum light intensity spot to crystallize the region;
- moving the region to be irradiated by the laser, effecting the crystallization;
- and
- heating the crystallized region by irradiating pulsed light from a flash lamp onto the crystallized region, covering a wide area,
- wherein, in the irradiating, the laser beam of light intensity distribution having the minimum light intensity line or minimum light intensity spot is formed by the optical modulator.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- irradiating a region to be crystallized of a non-monocrystalline semiconductor film with laser beam modulated by an optical modulator to have light intensity distribution having a minimum light intensity line or minimum light intensity spot to crystallize the region;
- and
- heating the crystallized region by irradiating light from a flash lamp onto the crystallized region,
- wherein the irradiation includes forming crystal grains which have triangular shape when viewed from one side, and whose plane orientation in a direction of crystal growth is (100) plane, and
- the heating includes growing, using the triangular crystal grains as crystal nucleus, crystal grains which have nearly rectangular surface shape as viewed from one side, and whose plane orientation in a direction of crystal growth is (100) plane, in the semiconductor thin film.
2 more elements
Dependencies are inferred from the claim text.