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US 7,407,865 B2Granted
Epitaxial growth method
AssigneeSamsung Corning Co., Ltd.
InventorSung-soo Park
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Abstract
An epitaxial growth method for forming a high-quality epitaxial growth semiconductor wafer is provided. The method includes forming a single crystalline layer on a single crystalline wafer; forming a mask layer having nano-sized dots on the single crystalline layer; forming a porous buffer layer having nano-sized pores by etching the mask layer and the surface of the single crystalline layer; annealing the porous buffer layer; and forming an epitaxial material layer on the porous buffer layer using an epitaxial growth process.
Claims11
An epitaxial growth method comprising:
- forming a single crystalline layer on a single crystalline wafer;
- forming a mask layer having nano-sized dots on the single crystalline layer;
- forming a porous buffer layer having nano-sized pores by etching the mask layer and the surface of the single crystalline layer;
- annealing the porous buffer layer;
- and
- forming an epitaxial material layer on the porous buffer layer using an epitaxial growth process.
3 more elements
Dependencies are inferred from the claim text.