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US 7,407,858 B2Granted
Resistance random access memory devices and method of fabrication
AssigneeSharp Laboratories of America, Inc.
InventorsTingkai Li, Sheng Teng Hsu, David R. Evans
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Abstract
A method of fabricating a RRAM includes preparing a substrate and forming a bottom electrode ori the substrate. A PCMO layer is deposited on the bottom electrode using MOCVD or liquid MOCVD, followed by a post-annealing process. The deposited PCMO thin film has a crystallized PCMO structure or a nano-size and amorphous PCMO structure. A top electrode is formed on the PCMO layer.
Claims12
A method of fabricating a RRAM, comprising:
- preparing a substrate;
- forming a bottom electrode on the substrate;
- depositing a PCMO layer on the bottom electrode, wherein said depositing is taken from the group of deposition methods consisting of MOCVD and liquid MOCVD, and wherein the PCMO thin film has a crystallized PCMO structure or a nano-size and amorphous PCMO structure;
- post-annealing the substrate, bottom electrode and PCMO layer;
- and
- forming a top electrode on the PCMO layer.
3 more elements
A method of fabricating a RRAM, comprising:
- preparing a substrate;
- forming a bottom electrode on the substrate;
- depositing a PCMO layer on the bottom electrode, wherein said depositing is taken from the group of deposition methods consisting of MOCVD and liquid MOCVD, depositing the PCMO layer at a deposition temperature of between about 300° C. to 440° C., and wherein the PCMO thin film has a nano-size and amorphous PCMO structure;
- forming a top electrode on the PCMO layer;
- and
- annealing the RRAM.
3 more elements
A method of fabricating a RRAM, comprising:
- preparing a silicon substrate;
- forming a layer of silicon oxide on the silicon substrate;
- depositing a layer of titanium on the silicon oxide;
- forming a platinum bottom electrode on the substrate;
- depositing a PCMO layer on the platinum bottom electrode, wherein said depositing is taken from the group of deposition methods consisting of MOCVD and liquid MOCVD, depositing the PCMO layer at a deposition temperature of between about 300° C. to 600° C., and wherein the PCMO thin film has a crystallized PCMO structure or a nano-size and amorphous PCMO structure;
- forming a platinum top electrode on the PCMO layer;
- and
- annealing the RRAM.
5 more elements
Dependencies are inferred from the claim text.