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US 7,407,856 B2Granted
Method of manufacturing a memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsIn-kyeong Yoo, Byong-man Kim
Life of this patent
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Abstract
A method of manufacturing a memory device includes defining a field region and an active region in a substrate, forming a field oxide layer on the field region, forming an insulating layer on the active region, patterning the insulating layer to form first and second bit lines separated from and parallel to each other on the active region, forming a memory element for storing data in a nonvolatile state, wherein the memory element passes across the first and second bit lines, and forming a word line on the insulating layer and the memory element.
Claims10
A method of manufacturing a memory device, comprising:
- defining a field region and an active region in a substrate;
- forming a field oxide layer on the field region;
- forming an insulating layer on the active region;
- patterning the insulating layer to form first and second bit lines separated from and parallel to each other on the active region;
- forming a memory element for storing data in a nonvolatile state, wherein the memory element passes across the first and second bit lines;
- and
- forming a word line on the insulating layer and the memory element.
4 more elements
Dependencies are inferred from the claim text.