Thin film transistor, display device and their production
AssigneeHitachi, Ltd.
InventorsMasahiko Ando, Masatoshi Wakagi, Hiroshi Sasaki
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Abstract
The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.
Claims12
A method for manufacturing a thin film transistor comprising the steps of:
- forming a gate electrode on a substrate,
- forming an insulation film on the gate electrode,
- forming a self assembled monolayer film within a gate electrode-projected region and on the insulation film,
- forming a semiconductor film on the insulation film and the self assembled monolayer film, the semiconductor film being composed of an aggregate of organic semiconductor molecules, and
- forming a source electrode and drain electrode on the insulation film and the semiconductor film.
A method for manufacturing a thin film transistor comprising the steps of:
- forming a gate electrode on a substrate,
- forming an insulation film on the gate electrode,
- forming a self assembled monolayer film within a gate electrode-projected region and on the insulation film,
- applying and burning an electroconductive ink on the insulation film to form a source electrode and drain electrode,
- forming a semiconductor film on the source electrode and drain electrode and on the self assembled monolayer film, the semiconductor film being composed of an aggregate of organic semiconductor molecules.
Dependencies are inferred from the claim text.