Method of manufacturing a semiconductor method of manufacturing a thin-film transistor and thin-film transistor

A method for manufacturing a device comprising a pixel region and a drive circuit, each comprising a transistor, with the drive circuit being connected to provide a drive signal to the transistor of the pixel region, said method comprising:

• forming, at least in the pixel region, anactive layer comprising a plurality of semiconductor islands arranged in parallel to each other over a substrate;
• doping a p-type impurity into said active layer by ion doping to form a p-type impurity region in said active layer, said active layer comprising a part to become a channel region adjacent to said p-type impurity region;
• forming a gate electrode adjacent to said part to become said channel region;
• activating said p-type impurity by annealing;
• forming an interlayer insulating film comprising a silicon nitride layer and a silicon oxide layer over said active layer by plasma CVD, said silicon nitride layer and said silicon oxide layer formed over said gate electrode and said active layer;
• and
• forming a conductive multi-layer film comprising a titanium layer and an aluminum layer over said interlayer insulating film,
• wherein said transistor of said pixel region comprises said channel region and said gate electrode and said p-type, impurity region.

A method for manufacturing a device comprising a pixel region and a drive circuit, each comprising a transistor, with the drive circuit being connected to provide a drive signal to the transistor of the pixel region, said method comprising:

• forming, at least in the pixel region, an active layer comprising a plurality of semiconductor islands arranged in parallel to each other over a substrate;
• doping a p-type impurity into said active layer by ion doping to form a p-type impurity region in said active layer, said active layer comprising a part to become a channel region adjacent to said p-type impurity region;
• forming a gate electrode adjacent to said part to become said channel region;
• activating said p-type impurity by annealing;
• forming an interlayer insulating film comprising a silicon nitride layer and a silicon oxide layer over said active layer by plasma CVD, said silicon nitride layer and said silicon oxide layer formed over said gate electrode and said active layer;
• and
• forming a conductive layer comprising titanium and aluminum over said interlayer insulating film,
• wherein said transistor of said pixel region comprises said channel region and said gate electrode and said p-type impurity region.

A method for manufacturing a device comprising a pixel region and a drive circuit, each comprising a transistor, with the drive circuit being connected to provide a drive signal to the pixel region, said method comprising:

• forming, at least in the pixel region, an active layer comprising a plurality of semiconductor islands arranged in parallel to each other over a substrate;
• doping a p-type impurity into said active layer by ion doping to form a source region and a drain region in said active layer, said active layer comprising a part to become a channel region between said source region and said drain region;
• forming a gate electrode adjacent to said part to become said channel region;
• activating said p-type impurity by annealing;
• forming a first interlayer insulating film comprising a silicon nitride layer and a silicon oxide layer over said active layer by plasma CVD, said silicon nitride layer and said silicon oxide layer formed over said gate electrode and said active layer;
• forming a conductive layer comprising a titanium and an aluminum over said first interlayer insulating film;
• forming a second interlayer insulating film over said conductive layer;
• and
• forming a pixel electrode over said second interlayer insulating film,
• wherein said transistor of said pixel region comprises said channel region and said gate electrode and said source region and said drain region.

A method for manufacturing a device comprising a pixel region and a drive circuit, each comprising a transistor, with the drive circuit being connected to provide a drive signal to the transistor of the pixel region, said method comprising:

• forming, at least in the pixel region, an active layer comprising a plurality of semiconductor islands arranged in parallel to each other over a substrate;
• doping a p-type impurity into said active layer by ion doping to form a source region and a drain region in said active layer, said active layer comprising a part to become a channel region between said source region and said drain region;
• forming a gate electrode adjacent to said part to become said channel region;
• activating said p-type impurity by annealing;
• forming a first interlayer insulating film comprising a silicon nitride layer and a silicon oxide layer over said active layer by plasma CVD, said silicon nitride layer and said silicon oxide layer formed over said gate electrode and said active layer;
• forming a conductive layer comprising a titanium and an aluminum over said first interlayer insulating film;
• forming a second insulating film comprising silicon oxide over said conductive layer;
• and
• forming a pixel electrode over said second insulating film,
• wherein said transistor of said pixel region comprises said channel region and said gate electrode and said source region and said drain region.

A method for manufacturing a device comprising a pixel region and a drive circuit, each comprising a transistor, with the drive circuit being connected to provide a drive signal to the transistor of the pixel region, said method comprising:

• forming, at least in the pixel region, an active layer comprising a plurality of semiconductor islands arranged in parallel to each other over a substrate;
• doping a p-type impurity into said active layer by ion doping to form a source region and a drain region in said active layer, said active layer comprising a part to become a channel region between said source region and said drain region;
• forming a gate electrode adjacent to said part to become said channel region;
• activating said p-type impurity by annealing;
• forming a first interlayer insulating film comprising a silicon nitride layer and a silicon oxide layer over said active layer by plasma CVD, said silicon nitride layer and said silicon oxide layer formed over said gate electrode and said active layer;
• forming a conductive layer comprising a titanium and an aluminum over said first interlayer insulating film;
• forming a second insulating film comprising silicon oxide over said conductive layer;
• and
• forming a pixel electrode comprising indium tin oxide over said second insulating film,
• wherein said transistor of said pixel region comprises said channel region and said gate electrode and said source region and said drain region.