Electrically programmable memory element with improved contacts
AssigneeOvonyx, Inc.
InventorsTyler Lowrey, Stanford R. Ovshinsky, Guy C. Wicker, Patrick J. Klersy, Boil Pashmakov, Wolodymyr Czubatyj, Sergey A. Kostylev
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Abstract
A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material; and forming a programmable resistance material in electrical contact with a peripheral surface of the conductive material.
Claims64
A method of making a plurality of electrically programmable memory elements, comprising:
- providing a first dielectric layer, said first dielectric layer having an opening, said opening having first and second sidewall surfaces and a bottom surface;
- forming a conductive layer on said sidewall surfaces and on said bottom surface of said opening;
- removing at least a portion of said conductive layer from said bottom surface, thereby electrically isolating portions of said conductive layer formed on said first and second sidewalls, one from the other;
- forming a second dielectric layer contacting said bottom surface or said opening;
- and
- forming a programmable resistance material in electrical communication with top portions of said electrically isolated portions of said conductive layer.
A method of making electrically programmable memory elements, comprising:
- providing first and second sidewall surfaces and an adjoining bottom surface;
- forming a conductive layer on said sidewall surfaces and on a portion of said bottom surface, said portion being less than the entire bottom surface and thereby electrically isolating the conductive layer on the first sidewall surface from the conductive layer on the second sidewall surface;
- forming a dielectric material contacting said bottom surface of said opening;
- and
- forming a programmable resistance material in electrical communication with said conductive layer.
A method of making an electrical device, comprising:
- providing first and second sidewall surfaces and an adjoining bottom surface;
- forming a conductive layer on said sidewall surfaces and on a portion of said bottom surface, said portion being less than the entire bottom surface and thereby electrically isolating the conductive layer on the first sidewall surface from the conductive layer on the second sidewall surface;
- forming a dielectric material contacting said bottom surface of said opening;
- and
- forming a chalcogenide material in electrical communication with said conductive layer.
A method of making an electrical device, comprising:
- forming electrical contacts by a method comprising:
- providing first and second sidewall surfaces and an adjoining bottom surface;
- forming a conductive layer on said sidewall surfaces and on a portion of said bottom surface, said portion being less than the entire bottom surface and thereby electrically isolating the conductive layer on the first sidewall surface from the conductive layer on the second sidewall surface;
- forming a dielectric material contacting said bottom surface of said opening;
- and
- forming a chalcogenide material in electrical communication with said electrical contact.
A method of making an electrical device, comprising:
- forming electrical contacts by a method comprising:
- providing first and second sidewall surfaces and an adjoining bottom surface;
- forming a conductive layer on said sidewall surfaces and on a portion of said bottom surface, said portion being less than the entire bottom surface and thereby electrically isolating the conductive layer on the first sidewall surface from the conductive layer on the second sidewall surface;
- forming a dielectric material contacting said bottom surface of said opening;
- and
- forming a phase-change material in electrical communication with said electrical contact.
Dependencies are inferred from the claim text.