US 7,407,821 B2 · Substrate processing method

Abstract

There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement.

Claims13

Dependent claims

A method comprising:

on a substrate having a metal portion and an insulating material portion, with metal of said metal portion and insulating material of said insulating material portion exposed at a surface of said substrate, selectively forming a coating film on an exposed surface of said metal portion;
defining on said substrate a measurement area and a target area;
preparing beforehand a calibration curve showing a relationship between a film property of coating film in said measurement area and a film property of this coating film in said target area;
determining a film property of the selectively formed coating film in said measurement area during and/or immediately after selectively forming said coating film;
and
converting the film property as determined to a film property of the selectively formed coating film in said target area by using said calibration curve.

3 more elements

Dependencies are inferred from the claim text.

Substrate processing method

Life of this patent

Substrate processing method

Life of this patent

Abstract

Claims13