Method for manufacturing a semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorsKousuke Hara, Toshihiko Kamatani, Masaki Yoshimaru, Motoki Kobayashi
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Abstract
A method for manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate, forming a lower electrode having a laminated film of Ir and IrO2 whose thickness is 100 nm or less over the semiconductor substrate, forming a capacity insulating film comprised of a metal oxide dielectric on the lower electrode, and forming an upper electrode comprised of a precious metal film on the capacity insulating film.
Claims11
A method for manufacturing a semiconductor device, comprising the steps of:
- preparing a semiconductor substrate;
- forming a lower electrode which is a laminate comprised of a layer of Ir and a layer of IrO2 over the semiconductor substrate;
- forming a capacitor insulating film comprised of a metal oxide dielectric on the lower electrode;
- and
- forming an upper electrode comprised of a precious metal film on the capacitor insulating film,
- wherein the Ir film and the IrO2 film have a combined thickness of 100 nm or less so that leakage current of the semiconductor device is reduced, and
- wherein the laminate comprising the lower electrode further comprises a hydrogen diffusion barrier film provided proximate to the semiconductor layer and under a lower surface of-the layer of Ir, and a conductive film comprised of a precious metal provided on the layer of IrO2 in contact with the capacitor insulating film which functions to reduce Ir diffusion.
A method for manufacturing a semiconductor device, comprising the steps of:
- preparing a semiconductor substrate;
- forming a lower electrode over the semiconductor substrate which is a laminate;
- comprised of, in the order recited, a TiAlN film provided on the semiconductor substrate, an Ir film, an IrO2 film, and a conductive film consisting of Pt;
- forming a capacitor insulating film comprised of a metal oxide dielectric on the lower electrode;
- and
- forming an upper electrode comprised of a precious metal film on the capacitor insulating film,
- wherein the Ir film and the IrO2 film each has a respective thickness of 1 nm or more and have a combined thickness of 100 nm or less so that leakage current of the semiconductor device is reduced.
A method for manufacturing a semiconductor device, comprising the steps of:
- preparing a semiconductor substrate;
- forming a lower electrode over the semiconductor substrate which is a laminate comprised of, in the order recited, a hydrogen diffusion barrier film provided on the semiconductor substrate, an Ir film, an IrO2 film, and a precious metal film consisting of Pt;
- forming a capacity insulating film comprised of a metal oxide dielectric on said lower electrode;
- and
- forming an upper electrode comprised of a precious metal film on said capacity insulating film,
- wherein the Ir film and the IrO2 film each has a respective thickness of 1 nm or more and have a combined thickness of 100 nm or less so that leakage current of the semiconductor device is reduced.
Dependencies are inferred from the claim text.