Resist composition for electron beam or EUV
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsTakeo Watanabe, Hideo Hada, Hiroo Kinoshita
Life of this patent
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Abstract
A resist composition and a method of forming a resist pattern that enable contamination within the exposure apparatus to be prevented in lithography processes using an electron beam or EUV (extreme ultraviolet light). In this method, an organic solvent containing, as the principal component, one or more compounds selected from a group consisting of propylene glycol monomethyl ether (PGME), methyl amyl ketone (MAK), butyl acetate (BuOAc), and 3-methyl methoxy propionate (MMP) is used as the resist solvent.
Claims9
A resist composition for an electron beam or EUV, comprising a compound (A) having acid dissociable, dissolution inhibiting groups, an acid generator (B), and an organic solvent comprising one or more compounds selected from the group consisting of propylene glycol monomethyl ether (PGME), methyl amyl ketone (MAK), butyl acetate (BuOAc) and 3-methyl methoxy propionate (MMP), wherein the compound (A) comprises:
- a resin component (A-1),
- wherein the resin component (A-1) comprises a copolymer selected from the group consisting of:
- a copolymer comprising structural units (a1) and (a3);
- and
- a copolymer comprising structural units (a1) and (a2), wherein
- the structural unit (a1) is represented by a general formula (I) shown below within a range from 40 to 80 mol %:
- wherein R represents —H or —CH3;
- the structural unit (a2) is represented by a general formula (II) shown below:
- wherein, R represents —H or —CH3, and X represents an acid dissociable, dissolution inhibiting group;
- and
- the structural unit (a3) is represented by a general formula (III) shown below:
- wherein, R and R1 each represent, independently, —H or —CR3, R2 represents —CR3 or —C2H5, and R3 represents an alkyl group of 1 to 5 carbon atoms.
Dependencies are inferred from the claim text.