EUV magnetic contrast lithography mask and manufacture thereof

Abstract

An EUV Lithography mask, a fabrication method, and use method thereof is provided. A preferred embodiment comprises a substrate, a Bragg reflector disposed upon the substrate, a buffer disposed upon the Bragg reflector, and an absorber layer disposed upon the buffer. The materials in the mask have selected magnetic properties. In a preferred embodiment, the buffer is a hard magnetic material, and the absorber is a soft magnetic material. Another preferred embodiment includes a mask manufacturing method further including a mask step. In a preferred embodiment, an electron mirror microscope is used to inspect the mask by imaging its topography with respect to its magnetic properties in an applied magnetic field.

Dependencies are inferred from the claim text.