Information recording medium and method for manufacturing the same

An information recording medium comprising:

• a plurality of information layers including at least one information layer having:
• a recording layer that is changeable between a crystalline phase and an amorphous phase by applying at lease one of a laser beam and electric current, and
• a dielectric layer containing at least C, Si, Sn and O, the dielectric layer being represented by a composition formula CdSieSnfO100−d−e−f, where 0<d<25, 0<e<25, and 15<f<40 (atom %).

A method for manufacturing an information recording medium comprising:

• forming an information layer including forming a phase-change type recording layer and forming a dielectric layer;
• and
• using a sputtering target containing at least C, Si, Sn and O in forming the dielectric layer, the sputtering target being represented by a composition formula CgSihSniO100−g−h−i, where 0<g<30, 0<h<30, and 15<i<40 (atom %).

A method for manufacturing an information recording medium comprising:

• forming a plurality of information layers, the forming of the information layers including forming at least one information layer having a phase-change type recording layer and a dielectric layer;
• and
• using a sputtering target containing at least C, Si, Sn and O in forming the dielectric layer, the sputtering target being represented by a composition formula CgSihSniO100−g−h−i, where 0<g<30, 0<h<30, and 15<i<40 (atom %).

An information recording medium for at least one of recording and reproducing information by applying at least one of light and electric energy, comprising:

• an information layer including a dielectric layer that contains at least one of elements of a group GM consisting of Sn and Ga, contains at least one of elements of a group GL consisting of Si, Ta and Ti, and contains oxygen and carbon,
• wherein the dielectric layer is represented by a composition formula MHOILJCK (atom %), where element M is at least one of elements of the group GM, element L is at least one of elements of the group GL, term H falls in a range 10≦H≦40, term I falls in a range 35≦I≦70, term J falls in a range 0<J≦30, term K falls in a range 0<K≦30, and equation H+I+J+K=100 is satisfied.

A method for manufacturing an information recording medium for at least one of recording and reproducing information by applying at least one of light and electric energy comprising:

• providing the information recording medium with a dielectric layer;
• and
• forming the dielectric layer by a sputtering method using a sputtering target that contains at least one of elements of a group GM consisting of Sn and Ga, contains at least one of elements of a group GL consisting of Si, Ta and Ti, and contains oxygen and carbon, wherein the sputtering target contains a material represented by a composition formula MhOiLjCk (atom %), where element M is at least one of elements of the group GM, element L is at least one of elements of the group GL, term h falls in a range 10≦h≦40, term i falls in a range 35≦i≦70, term j falls in a range 0<j≦30, term k falls in a range 0<k≦30, and equation h+i+j+k=100 is satisfied.