Polymeric particle slurry system and method to reduce feature sidewall erosion
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShen-Nan Lee, Ying-Ho Chen, Syun-Ming Jang, Tzu-Jen Chou
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShen-Nan Lee, Ying-Ho Chen, Syun-Ming Jang, Tzu-Jen Chou
Estimating the term…
A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than about 9.5; and wherein the method includes providing a semiconductor wafer process surface including a oxide containing material and metal filled semiconductor features; providing the system; and, polishing in a CMP process the semiconductor wafer process surface using the slurry system to remove at least a portion of the oxide containing material and the metal comprising the metal filled semiconductor features.
A slurry system for an improved low-K oxide/copper chemical mechanical polishing (CMP) process with low solids content to avoid copper damascene sidewall erosion and to reduce CMP impact forces comprising:
A slurry system for an improved low-K oxide/copper chemical mechanical polishing (CMP) process to reduce copper damascene sidewall erosion comprising:
A slurry system for an improved low-K oxide/copper chemical mechanical polishing (CMP) process to reduce copper damascene sidewall erosion comprising:
Dependencies are inferred from the claim text.